Modeling of CdTe epitaxial growth by close spaced sublimation
A thorough theoretical study of the growth rates of CdTe/Glass thin films using close-spaced sublimation in two limit cases is presented. The approach consists of deriving two equations that calculate the growth rates in the sublimation and diffusion limited cases, respectively. In the sublimation limited scenario, the slowest process is the rate at which the atoms of Cd and Te are being expelled from the source. In the diffusion limited scenario, the slowest process is the transport of Cd and Te atoms from the source to the substrate due to the collisions within atoms. ^ The model that results from combining both equations predicts a behavior that qualitatively agrees with experimental data. In order to achieve a quantitative fit to experimental data, the model was adjusted using two parameters. The adjustable parameters are loosely associated with losses involved in the evaporation, transport, and condensation mechanisms. When adjusted, the model accurately predicts the growth rate in a temperature range from 400 to 600°C, pressures from 0 to 760 Torr, and substrate-source distances from 0.87 to 1 mm. ^ The approach used in this study can easily be used to predict growth rates using other substrates and sources by manipulating the adjustable parameters.* ^ *This dissertation is a compound document (contains both a paper copy and a CD as part of the dissertation). The CD requires the following system requirements: Microsoft Office.^
Engineering, Electronics and Electrical|Engineering, Materials Science
Cruz-Campa, Jose Luis, "Modeling of CdTe epitaxial growth by close spaced sublimation" (2007). ETD Collection for University of Texas, El Paso. AAI1444076.