Structure, morphology and optical properties of nanocrystalline Ga2O3 thin films
Gallium Oxide thin films were produced by sputter deposition by varying the substrate temperature (Ts) in a wide range (Ts=25-800 °C) and under variable deposition time. The structural characteristics and optical properties of Ga2O3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS) and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure and morphology of Ga2O 3 films. XRD and SEM analyses indicate that the Ga2O 3 films grown at lower temperatures were amorphous while those grown at Ts ≥ 500 °C were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga2O3 films at Ts = 300–700 °C. The spectral transmission of the films increased with increasing temperature. The band gap of the films varied from 4.96 eV to 5.17 eV for a variation in Ts in the range 25–800 °C for samples deposited for 30 minutes and it varied from 4.98 eV to 5.09 eV for a variation in Ts in range of 400-800 °C. A relationship between microstructure and optical property is discussed.^
Engineering, Materials Science
Samala, Sampath Kumar, "Structure, morphology and optical properties of nanocrystalline Ga2O3 thin films" (2012). ETD Collection for University of Texas, El Paso. AAI1533251.