Installation and development of VLSI nanotechnology computer simulation capability

Rangasai Venkata Chaganty, University of Texas at El Paso

Abstract

Simulation of microelectronic processes plays a pivotal role in area of Very Large Scale Integration (VLSI) by providing precise and accurate values of various parameters of a nano-device, before its actual fabrication. ^ This report focuses on the simulation software, Integrated Systems Engineering-Technology Computer Aided Design (ISE-TCAD, version 8.0). The graphical user interface, GENESISe, of this software has been discussed followed by the process and device simulation tools, which are explained with the help of a 100nm MOSFET. The 100nm MOSFET process was developed using various tools available in this software. ^ This report also presents some of the simulation activities designed for a VLSI nanotechnology class to help students learn this software quickly and easily. A list of future works has also been proposed, which if implemented, will ensure the usage of this software in the best possible manner. ^

Subject Area

Engineering, Electronics and Electrical|Computer Science

Recommended Citation

Chaganty, Rangasai Venkata, "Installation and development of VLSI nanotechnology computer simulation capability" (2003). ETD Collection for University of Texas, El Paso. AAIEP10531.
http://digitalcommons.utep.edu/dissertations/AAIEP10531

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