Characterization of Internal Stress in Boron Doped Diamond Thin Films by Raman Microscopy
The correlations between induced stress on undoped and boron-doped diamond (BDD) thin films, sample chemical composition, and fabrication substrate are investigated in this study via confocal Raman microspectroscopic analysis. Stability of BDD films is relevant to fast-scan cyclic voltammetry, as film delamination and dislocation of BDD-coated electrodes that can occur during neurosurgical electrode implantation can negatively impact the biosensing reliability of this technique. Electrodes were fabricated by coating cylindrical tungsten rods using a custom-built chemical vapor deposition reactor. The results of the analysis reveal a direct correlation between regions of pure diamond and enhanced material stress, as well as preferential boron incorporation into the diamond lattice. Higher amounts of boron addition were shown by the Raman mapping to coincide with definite stress release throughout the entire film thickness. Additionally, sp2 type carbon impurities may contribute to high values of compressive stress beyond those predicted by the film—substrate lattice mismatch.^
Sundin, Emma Marta Adelaide, "Characterization of Internal Stress in Boron Doped Diamond Thin Films by Raman Microscopy" (2017). ETD Collection for University of Texas, El Paso. AAI10283705.