Investigation of selective area growth and surface characterization of cadmium telluride
An ordered polycrystalline approach is proposed to overcome fundamental problems associated with random polycrystalline thin films, namely grain boundaries and inhomogeneity. The approach consists of two main steps; (1) the deposition of a patterned growth mask and (2) the selective-area deposition of the ordered polycrystals. The ordered polycrystalline approach was investigated, and achieved using Selective-Area Growth of Cadmium Telluride on SiO 2, Si3N4, and CdS via Close-Spaced Sublimation. Experimental results demonstrate that SiO2 and Si3N 4 are effective growth masks and that temperature is a dominant parameter for selective-area deposition. PL and XRD characterization indicates that the ordered polycrystalline technique has the potential for improving the crystal quality and order of polycrystalline CdTe thin-films. The approach appears to be fairly general and could be applied to other material systems. ^
Engineering, Electronics and Electrical
Terrazas Hinojosa, Javier Antonio, "Investigation of selective area growth and surface characterization of cadmium telluride" (2005). ETD Collection for University of Texas, El Paso. AAI1425904.