Date of Award

2014-01-01

Degree Name

Master of Science

Department

Physics

Advisor(s)

Felicia S. Manciu

Abstract

Metal oxides like Tungsten Oxide (WO3) are well documented and characterized in the literature, with uses in darkening windows and mirrors, flat computer displays, solar panel cooling, and sensors (of interest in this study). Ti doping of WO3 is less documented and the focus of this study. Sample thin films of pure WO3 and varyingly Ti doped WO3 were prepared using Radio Frequency magnetron sputtering (RF) (13.56 MHz) to grow thin films on a silicon substrate. This study aims to compare multiple Ti doping percentages in WO3 theoretically and then compare with experimental data taken from thin films of various Ti doping levels grown at temperatures ranging from room temperature to 400 0C. Characterization of the materials was to be conducted using Fourier Transform Infrared Spectroscopy, Raman Spectroscopy, X-ray diffraction, and other theoretical and simulated approaches. Theoretical calculations optimized Ti doping at somewhere between 6.25% and 12%. Experimental data indicates that under the given growing conditions optimal Ti doping is 5%. The percentage of Ti may be able to be increased and the material retain desired characteristics with an increased growth temperature above 400 0C as annealing samples post-growth has no positive impact on the thin film structure.

Language

en

Provenance

Received from ProQuest

File Size

58 pages

File Format

application/pdf

Rights Holder

Aurelio Paez

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